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Double Gaussian Distribution of Inhomogeneous Barrier Height in (Ni-Au)/Al0.25Ga0.75N/GaN

The forward current–voltage (Ig-Vg) properties of the (Ni-Au)/Al 0.25 Ga 0.75 N/GaN/SiC structure were examined in the temperature range of 50–320K. Temperature has considerable influence on the zero-bias barrier height ( Φ B0 ), series resistance ( Rs ),and ideality factor ( n ).Furthermore, the st...

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Bibliographic Details
Published in:Brazilian journal of physics 2023-02, Vol.53 (1), Article 26
Main Authors: Saadaoui, Salah, Fathallah, Olfa, Maaref, Hassen
Format: Article
Language:English
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Summary:The forward current–voltage (Ig-Vg) properties of the (Ni-Au)/Al 0.25 Ga 0.75 N/GaN/SiC structure were examined in the temperature range of 50–320K. Temperature has considerable influence on the zero-bias barrier height ( Φ B0 ), series resistance ( Rs ),and ideality factor ( n ).Furthermore, the standard Richardson plots of ln (I 0 /T 2 ) vs. 10 3 /T for this sample revealed two linear zones (50–230 K and 230–320 K). For Al 0.25 Ga 0.75 N, the Richardson constant ( A* ) values in the linear zones were less than the predicted value (34.2 Acm −2 K −2 ).This phenomenon is linked to the Schottky barrier inhomogeneities by adopting a double Gaussian distribution (GD) of the barrier heights (BHs) at the (Ni-Au)/Al 0.25 Ga 0.75 N interface. We attempted to establish an indication of the double GD of BHs for this sample by plotting Φ B0 vs. q/2kT . As a result, the Ig-Vg temperature dependency was satisfactorily described using the thermionic emission hypothesis with a double GD of the BHs at the (Ni-Au)/Al 0.25 Ga 0.75 N interface. These findings indicate that the inhomogeneous distribution of the surface and/or interface states is linked to the lateral inhomogeneity of the Schottky BH which is attributed to the defect existence confirming prior findings using the capacitance deep-level transient spectroscopy method.
ISSN:0103-9733
1678-4448
DOI:10.1007/s13538-022-01240-2