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Double Gaussian Distribution of Inhomogeneous Barrier Height in (Ni-Au)/Al0.25Ga0.75N/GaN
The forward current–voltage (Ig-Vg) properties of the (Ni-Au)/Al 0.25 Ga 0.75 N/GaN/SiC structure were examined in the temperature range of 50–320K. Temperature has considerable influence on the zero-bias barrier height ( Φ B0 ), series resistance ( Rs ),and ideality factor ( n ).Furthermore, the st...
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Published in: | Brazilian journal of physics 2023-02, Vol.53 (1), Article 26 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The forward current–voltage (Ig-Vg) properties of the (Ni-Au)/Al
0.25
Ga
0.75
N/GaN/SiC structure were examined in the temperature range of 50–320K. Temperature has considerable influence on the zero-bias barrier height (
Φ
B0
), series resistance (
Rs
),and ideality factor (
n
).Furthermore, the standard Richardson plots of ln
(I
0
/T
2
)
vs.
10
3
/T
for this sample revealed two linear zones (50–230 K and 230–320 K). For Al
0.25
Ga
0.75
N, the Richardson constant (
A*
) values in the linear zones were less than the predicted value (34.2 Acm
−2
K
−2
).This phenomenon is linked to the Schottky barrier inhomogeneities by adopting a double Gaussian distribution (GD) of the barrier heights (BHs) at the (Ni-Au)/Al
0.25
Ga
0.75
N interface. We attempted to establish an indication of the double GD of BHs for this sample by plotting
Φ
B0
vs.
q/2kT
. As a result, the Ig-Vg temperature dependency was satisfactorily described using the thermionic emission hypothesis with a double GD of the BHs at the (Ni-Au)/Al
0.25
Ga
0.75
N interface. These findings indicate that the inhomogeneous distribution of the surface and/or interface states is linked to the lateral inhomogeneity of the Schottky BH which is attributed to the defect existence confirming prior findings using the capacitance deep-level transient spectroscopy method. |
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ISSN: | 0103-9733 1678-4448 |
DOI: | 10.1007/s13538-022-01240-2 |