Thermal Sensing Characteristics of Low-Voltage n-Channel Organic Field-Effect Transistors With Triple Layers of Naphthalenediimide-Containing Conjugated Polymer and Gate-Insulating Polymers

• Published in: IEEE transactions on electron devices 2023-02, Vol.70 (2), p.720-725
• Main Authors: Lee, Chulyeon, Lee, Woongki, Song, Myeonghun, Kim, Hwajeong, Kim, Youngkyoo
• Format: Article
• Language: English
• Subjects: Electron mobility; Field effect transistors; Logic gates; n-channel; OFETs; organic field-effect transistors (OFETs); Polymers; Polymethyl methacrylate; Polyvinyl alcohol; Semiconductor devices; Sensitivity; Sensors; Temperature; Temperature measurement; Temperature sensors; thermal sensing; thermal sensitivity; Threshold voltage; Transistors; triple polymer layers
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2022.3228217

Organic field-effect transistors (OFETs) were fabricated with n-type naphthalenediimide-based conjugated polymer (N2200) as a channel layer and poly(methyl methacrylate) (PMMA)/poly(vinyl alcohol) (PVA) as a gate-insulating layer. The OFETs with the N2200/PMMA/PVA triple layers were operated with an n-channel mode at low voltages (≤5 V) and their electron mobility reached ca. 0.63 cm2/ \text{V}\cdot \text{s} at a drain voltage of 5 V. The drain current of OFETs was gradually increased as the temperature of channel region increased from 25 °C to 80 °C, whereas no shift in threshold voltage was measured upon the temperature variation. The relative thermal sensitivity of devices was almost linearly increased with the temperature, while a two-stage behavior by a border of ca. 35 °C was measured for specific thermal sensitivity. The present n-channel OFETs exhibited excellent thermal sensing performances upon repeated approaching/retracting tests using a heat source.