Second Quantization: Gating a Quantum Dot Through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate

We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a specific voltage and then lock the charge on the gate by wit...

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Bibliographic Details
Published in:arXiv.org 2023-02
Main Authors: Denisov, Artem O, Fuchs, Gordian, Oh, Seong W, Petta, Jason R
Format: Article
Language:English
Subjects:
Current leakage
Heterostructures
Quantum dots
Single electrons
Online Access:Get full text
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Summary:We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a specific voltage and then lock the charge on the gate by withdrawing the tip. Biasing with an AFM tip allows us to reduce the size of a quantum dot floating gate electrode down to \(\sim100~\mathrm{nm}\). Measurements of the conductance through a quantum dot formed beneath the floating gate indicate that its charge changes in discrete steps. From the statistics of the single-electron leakage events, we determine the floating gate leakage resistance \(R \sim 10^{19}~ \mathrm{Ohm}\) - a value immeasurable by conventional means.
ISSN:2331-8422
DOI:10.48550/arxiv.2302.07949