Loading…
Atomistic simulation of mechanical behavior of Cu/Cu3Sn solder interface with Kirkendall void under shear and tensile deformation
The effects of a Kirkendall void at the nanoscale on the mechanical behavior of a Cu/Cu 3 Sn solder interface under shear and tensile tests, respectively, are studied using molecular dynamics simulations. The simulation results show that for a solder interface without a Kirkendall void under tension...
Saved in:
Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2023-04, Vol.129 (4), Article 255 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The effects of a Kirkendall void at the nanoscale on the mechanical behavior of a Cu/Cu
3
Sn solder interface under shear and tensile tests, respectively, are studied using molecular dynamics simulations. The simulation results show that for a solder interface without a Kirkendall void under tension, fracture is induced by a collapse of the interface, and that for a solder interface without a Kirkendall void under shearing, plastic deformation is dominated by shear bands. A shear band propagates through a small void (radius ≤ 3 nm) but is stopped by a large void (radius = 4 nm) or neighboring dislocations. For a solder interface with a Kirkendall void under tension, a collapse of the solder interface occurs faster with increasing void radius. When the void is far away from the solder interface, fracture is dominated by a competition between a collapse of the solder interface and void deformation and growth. A solder interface has the maximum shear and tensile strength when a pre-existing void (radius = 1 nm) locates at the interface. For a solder interface with a Kirkendall void, the ultimate shear stress, tensile stress, and tensile strain decrease with increasing initial void radius. |
---|---|
ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-023-06558-5 |