Numerical Simulation of Temperature Field Dynamics in Single-Crystal Silicon at Repetitively-Pulsed High-Intensity Ion Implantation and Energy Impact on the Surface Layer

The surface layer modification of materials and coatings by ion beams is used in many fields of science and technology. The high-intensity implantation by ion beams with high power density and submillisecond duration, implies a significant pulsed heating of the irradiated surface layer, followed by...

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Bibliographic Details
Published in:Russian physics journal 2023-03, Vol.65 (11), p.1862-1866
Main Authors: Ivanova, A. I., Bleykher, G. A., Vakhrushev, D. O., Korneva, O. S.
Format: Article
Language:English
Subjects:
Analysis
Condensed Matter Physics
Diffusion layers
Enhanced diffusion
Hadrons
Heavy Ions
Ion beams
Ion implantation
Lasers
Mathematical and Computational Physics
Nuclear Physics
Numerical analysis
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Radiation effects
Silicon
Simulation methods
Single crystals
Surface layers
Temperature distribution
Theoretical
Thermal conductivity
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Summary:The surface layer modification of materials and coatings by ion beams is used in many fields of science and technology. The high-intensity implantation by ion beams with high power density and submillisecond duration, implies a significant pulsed heating of the irradiated surface layer, followed by its cooling due to the heat removal deep in the material thanks to its thermal conductivity and the implementation of repetitivelypulsed radiation-enhanced diffusion of atoms to depths exceeding the projective ion range. Based on the numerical simulation, the paper studies the temperature field dynamics in a silicon target at single-pulse and repetitively-pulsed submillisecond ion beams with 109 W/m2 pulsed power density. Temperature conditions are determined for the ion-implanted layer, which correspond to that of the radiation-induced diffusion of implanted elements, while the temperature in the matrix material does not lead to a deterioration of its microstructure and properties.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-023-02843-1