Loading…
High-throughput Experimental Technology: Rapid Identification of the Precious Metal Modified In2O3 for NO2 Low-temperature Sensing
It often takes much time to obtain the components of high-performance metal oxide semiconductor gas-sensitive materials by inefficient "trial and error method." In this study, high-throughput experimental technology (HTET) was used to modify the surface of In 2 O 3 nanoparticles, and the I...
Saved in:
Published in: | IEEE sensors journal 2023-04, Vol.23 (8), p.1-1 |
---|---|
Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | It often takes much time to obtain the components of high-performance metal oxide semiconductor gas-sensitive materials by inefficient "trial and error method." In this study, high-throughput experimental technology (HTET) was used to modify the surface of In 2 O 3 nanoparticles, and the In 2 O 3 precious metal gas-sensitive sensors with different surface modification rates were prepared. The gas-sensitive properties of the sensors were systematically studied. HTET can accelerate the synthesis of materials and the screening of gas-sensitive properties, and it significantly improves experimental efficiency. The results show that the 0.5 mol% silver modified In 2 O 3 (Ag 0.5 In) sensor leads to an ultra-high response ( R gas / R air = 923.6) to 5 ppm NO 2 at 50°C 5.75 times of the pure In 2 O 3 sensor. In addition, the sensor exhibits fast response (61.3 s) and recovery (106.3 s) times, high selectivity, and stable repeatability. The enhancement of the excellent NO 2 gas sensitivity is reached mainly due to synergistic effect of the catalysis of the precious metals and the increase of surface chemisorption oxygen. |
---|---|
ISSN: | 1530-437X 1558-1748 |
DOI: | 10.1109/JSEN.2023.3252016 |