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High-throughput Experimental Technology: Rapid Identification of the Precious Metal Modified In2O3 for NO2 Low-temperature Sensing

It often takes much time to obtain the components of high-performance metal oxide semiconductor gas-sensitive materials by inefficient "trial and error method." In this study, high-throughput experimental technology (HTET) was used to modify the surface of In 2 O 3 nanoparticles, and the I...

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Bibliographic Details
Published in:IEEE sensors journal 2023-04, Vol.23 (8), p.1-1
Main Authors: Zhang, Deqi, Du, Qian, Yang, Li, Gao, Jiyun, Yi, Jianhong, Hou, Ming, Guo, Shenghui, Zeng, Hongbo
Format: Article
Language:English
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Summary:It often takes much time to obtain the components of high-performance metal oxide semiconductor gas-sensitive materials by inefficient "trial and error method." In this study, high-throughput experimental technology (HTET) was used to modify the surface of In 2 O 3 nanoparticles, and the In 2 O 3 precious metal gas-sensitive sensors with different surface modification rates were prepared. The gas-sensitive properties of the sensors were systematically studied. HTET can accelerate the synthesis of materials and the screening of gas-sensitive properties, and it significantly improves experimental efficiency. The results show that the 0.5 mol% silver modified In 2 O 3 (Ag 0.5 In) sensor leads to an ultra-high response ( R gas / R air = 923.6) to 5 ppm NO 2 at 50°C 5.75 times of the pure In 2 O 3 sensor. In addition, the sensor exhibits fast response (61.3 s) and recovery (106.3 s) times, high selectivity, and stable repeatability. The enhancement of the excellent NO 2 gas sensitivity is reached mainly due to synergistic effect of the catalysis of the precious metals and the increase of surface chemisorption oxygen.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2023.3252016