Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives

• Published in: RSC advances 2023-09, Vol.13 (38), p.2633-26343
• Main Authors: Sarkar, Surajit, Banik, Hritinava, Rahman, Farhana Yasmin, Majumdar, Swapan, Bhattacharjee, Debajyoti, Hussain, Syed Arshad
• Format: Article
• Language: English
• Subjects: Behavior; Benzene; Chemistry; Electric fields; Fatty acids; Hydrocarbons; Memory devices; Organic materials; Power consumption; Stearic acid; Switching
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/d3ra03869f

Non-volatile memory devices using organic materials have attracted much attention due to their excellent scalability, fast switching speed, low power consumption, low cost etc. Here, we report both volatile as well as non-volatile resistive switching behavior of p -di[3,3′-bis(2-methylindolyl)methane]benzene (Indole2) and its mixture with stearic acid (SA). Previously, we have reported the bipolar resistive switching (BRS) behavior using 1,4-bis(di(1 H -indol-3-yl)methyl)benzene (Indole1) molecules under ambient conditions [Langmuir 37 (2021) 4449-4459] and complementary resistive switching (CRS) behavior when the device was exposed to 353 K or higher temperature [Langmuir 38 (2022) 9229-9238]. However, the present study revealed that when the H of -NH group of Indole1 is replaced by -CH 3 , the resultant Indole2 molecule-based device showed volatile threshold switching behaviour. On the other hand, when Indole2 is mixed with SA at a particular mole fraction, dynamic evolution of an Au/Indole2-SA/ITO device from volatile to non-volatile switching occurred with very good device stability (>285 days), memory window (6.69 × 10 2 ), endurance (210 times), data retention (6.8 × 10 4 s) and device yield of the order of 78.5%. Trap controlled SCLC as well as electric field driven conduction was the key behind the observed switching behaviour of the devices. In the active layer, trap centers due to the SA network may be responsible for non-volatile characteristics of the device. Observed non-volatile switching may be a potential candidate for write once read many (WORM) memory applications in future. Dynamic transition of resistive memory behaviour from volatile threshold switching to non-volatile WORM memory.