Absorption enhancement in GaAs based quantum dot solar cells using double-sided nanopyramid arrays

Quantum dot solar cells (QDSCs) are regarded as one of the most efficient devices due to their intermediate band structures. A suitable light-trapping (LT) strategy matching the absorption spectrum is important to improve the photocurrent conversion efficiency of QDSCs. In this paper, we have propos...

Full description

Saved in:
Bibliographic Details
Published in:Applied optics (2004) 2023-09, Vol.62 (26), p.7111
Main Authors: Chen, Xiaoling, Liu, Qing, Liu, Wen, Mao, Xu, Wei, Bo, Ji, Chunxue, Yang, Guiqiang, Bao, Yidi, Yang, Fuhua, Wang, Xiaodong
Format: Article
Language:English
Subjects:
Absorption spectra
Arrays
Electromagnetic absorption
Gallium arsenide
Photoelectric effect
Photoelectric emission
Photovoltaic cells
Quantum dots
Short circuit currents
Solar cells
Surface chemistry
Trapping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Quantum dot solar cells (QDSCs) are regarded as one of the most efficient devices due to their intermediate band structures. A suitable light-trapping (LT) strategy matching the absorption spectrum is important to improve the photocurrent conversion efficiency of QDSCs. In this paper, we have proposed a design of the periodically patterned top and bottom dielectric nanopyramid arrays for highly efficient light trapping in GaAs-based QDSCs. The dielectric nanopyramid arrays significantly improve the light absorption of QDSCs in the longer wavelength between 0.8 µm and 1.2 µm. In addition, this LT structure ensures a completely flat window layer and back surface field layer while passivating these semiconductor surfaces. For the optimized double-sided structure, the short-circuit current generated by QDSC is 34.32mA/cm 2 , where the photocurrent from the quantum dots (QDs) is 5.17mA/cm 2 . Compared to the photocurrent of the QDSC without an LT structure, the photocurrent of the double-sided structure is increased by 84%. The QD photocurrent of the double-sided structure is increased by 570% compared to that of the QDSC without the LT structure.
ISSN:1559-128X
2155-3165
DOI:10.1364/AO.500657