The impact of plasma enhancement on the deposition of carbon‐containing zirconia films by metalorganic chemical vapor deposition

Zirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation ‐ plasma‐enhanced chemical vapor deposition (PECVD]) ‐ of the g...

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Bibliographic Details
Published in:Plasma processes and polymers 2023-10, Vol.20 (10), p.n/a
Main Authors: Maaß, Philipp A., Bedarev, Vitali, Chauvet, Laura, Prenzel, Marina, Glauber, Jean‐Pierre, Devi, Anjana, Böke, Marc, Keudell, Achim
Format: Article
Language:English
Subjects:
Carbon
Crystallization
Electrical resistivity
Metalorganic chemical vapor deposition
MOCVD
PECVD
Precursors
thermal barrier coatings
Thermal conductivity
Thin films
Vapor phases
XPS
Zirconia
Zirconium dioxide
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Summary:Zirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation ‐ plasma‐enhanced chemical vapor deposition (PECVD]) ‐ of the gas phase and/or the growth surface to lower the growth temperature and to allow for a flexible coating design. PECVD causes the precursor to be transformed into a chemically active species, yielding thin films with a five times higher sticking coefficient compared to MOCVD. This leads to the onset of crystallization at lower surface temperatures. Carbon is incorporated at oxygen sites, so that the crystalline structure of zirconia is preserved, but the electrical conductivity is affected. The thermal conductivity is like that of pure zirconia. Zirconia films are deposited by combining an MOCVD process with plasma enhancement for applications as thermal barriers in injection molds. The experiments reveal that plasma enhancement leads to activated precursor fragments in the gas phase, leading to changes in growth temperature, crystallization, chemical composition, and thermal conductivity.
ISSN:1612-8850
1612-8869
DOI:10.1002/ppap.202300050