Influence of High-Dose 80 MeV Proton Irradiation on the Electronic Structure and Photoluminescence of β-Ga2O3

β-Ga 2 O 3 is regarded as one of the best materials for application in deep space exploration; thus, research on β-Ga 2 O 3 -related radiation damage is necessary for the use of devices in harsh environments. The present work explored the effects of 80 MeV high-energy proton irradiation on β-Ga 2 O...

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Bibliographic Details
Published in:Journal of electronic materials 2023-11, Vol.52 (11), p.7718-7727
Main Authors: Wang, Kejia, Cao, Rongxing, Mei, Bo, Zhang, Hongwei, Lv, He, Zhao, Lin, Xue, Yuxiong, Zeng, Xianghua
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Conduction bands
Crystal defects
Deep space
Electronic structure
Electronics and Microelectronics
Electrons
Energy gap
Energy levels
Fermi level
Fluence
Gallium oxides
Instrumentation
Materials Science
Optical and Electronic Materials
Original Research Article
Oxygen
Photoelectrons
Photoluminescence
Proton irradiation
Radiation damage
Radiation dosage
Scientific imaging
Single crystals
Solid State Physics
Space exploration
Spectrometry
X ray photoelectron spectroscopy
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Summary:β-Ga 2 O 3 is regarded as one of the best materials for application in deep space exploration; thus, research on β-Ga 2 O 3 -related radiation damage is necessary for the use of devices in harsh environments. The present work explored the effects of 80 MeV high-energy proton irradiation on β-Ga 2 O 3 single crystals with fluence of 4 × 10 13  cm −2 and 1 × 10 14  cm −2 . X-ray photoelectron spectrometry (XPS) and ultraviolet photoelectron spectrometry (UPS) measurements demonstrated that before proton irradiation, the Fermi level was pinned at the mid-gap energy level due to the existence of native oxygen and gallium vacancy defects. After proton irradiation, gallium and oxygen vacancies increased with irradiation fluence, resulting in the reduction of the bandgap of β-Ga 2 O 3 . Proton irradiation of β-Ga 2 O 3 at 80 MeV is more likely to produce oxygen vacancies; hence, the Fermi level shifts upward to the conduction band. In addition, the UV photoluminescence emission at 3.29 eV is greatly enhanced with irradiation fluence. These results will be helpful for the design of UV devices. Graphical Abstract
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-023-10687-1