Quantum spin probe of single charge dynamics

Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are difficult to access at the single-particle level due to the l...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2023-12
Main Authors: Marcks, Jonathan C, Mykyta Onizhuk, Yu-Xin, Wang, Zhu, Yizhi, Yu, Jin, Soloway, Benjamin S, Fukami, Masaya, Nazar Delegan, Heremans, F Joseph, Clerk, Aashish A, Galli, Giulia, Awschalom, David D
Format: Article
Language:English
Subjects:
Defects
Diamonds
Electron spin
Optical activity
Qubits (quantum computing)
Solid state
Spin dynamics
Spin resonance
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. A method for probing optically inactive spin defects would reveal semiconductor physics at the atomic scale and advance the study of new quantum systems. We exploit the intrinsic correlation between the charge and spin states of defect centers to measure defect charge populations and dynamics through the steady-state spin population, read-out at the single-defect level with a nearby optically active qubit. We directly measure ionization and charge relaxation of single dark defects in diamond, effects we do not have access to with traditional coherence-based quantum sensing. These spin resonance-based methods generalize to other solid state defect systems in relevant materials.
ISSN:2331-8422