A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications

Purpose The purpose of this paper is to develop the design and analytical modelling of a noise immune double suspended gate MOSFET (DSG-MOSFET) for ultra-low power applications. Also, important performance parameters of the proposed structure such as pull-in and pull-out voltages have been thoroughl...

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Bibliographic Details
Published in:SILICON 2022-07, Vol.14 (10), p.5091-5101
Main Authors: Sengupta, Savio Jay, Goswami, Bijoy, Das, Pritam, Sarkar, Subir Kumar
Format: Article
Language:English
Subjects:
Boundary conditions
Chemistry
Chemistry and Materials Science
CMOS
Current voltage characteristics
Data encryption
Design analysis
Design parameters
Electrodes
Environmental Chemistry
Inorganic Chemistry
Lasers
Materials Science
Mathematical models
Modelling
MOSFETs
Optical Devices
Optics
Photonics
Polymer Sciences
Power management
Review Paper
Simulation
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Summary:Purpose The purpose of this paper is to develop the design and analytical modelling of a noise immune double suspended gate MOSFET (DSG-MOSFET) for ultra-low power applications. Also, important performance parameters of the proposed structure such as pull-in and pull-out voltages have been thoroughly investigated with respect to the valuable structural parameters. Methods The design methodology used is EKV based analytical approach to calculate the pull-in and pull-out voltages with ingeniously developed boundary conditions which helps achieving reasonably accurate result. Also, the I-V characteristics has been modelled to justify accuracy. Result The experimental result shows that the pull-in and pull-out voltages are in millivolts and microvolts range and hence it can be used in ultra-low power applications. As the ratio between the pull-out and the pull-in voltage is 10^(+3) range, justifies that the proposed structure is noise immune. The I D -V GS characteristic has hysteresis and this sharp transition in pull-in and pull-out voltage indicates that it can be used as an ideal switch with infinite sub-threshold slope. Conclusion This paper presents a compact EKV based analytical modelling of pull-in and pull-out voltages for a DSG-MOFET which predict the device characteristics reasonably similar to simulated results. Also, for the first time the noise immunity for a DSGMOSFET has been analyzed.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-021-01283-1