Surface Potential Modeling of Graded-Channel Gate-Stack (GCGS) High-K Dielectric Dual-Material Double-Gate (DMDG) MOSFET and Analog/RF Performance Study

In each complementary metal-oxide-semiconductor (CMOS) technology generation, design of new device architectures at nanoscale regime becomes quite challenging task due to increased short channel effects (SCEs) and leakage current. A double-gate (DG) MOSFET is an alternative structure. To enhance the...

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Bibliographic Details
Published in:SILICON 2018-11, Vol.10 (6), p.2865-2875
Main Authors: Narendar, Vadthiya, Girdhardas, Kalola Ankit
Format: Article
Language:English
Subjects:
Boundary conditions
Chemistry
Chemistry and Materials Science
CMOS
Configuration management
Electric fields
Environmental Chemistry
Hafnium oxide
Inorganic Chemistry
Lasers
Leakage current
Materials Science
Mathematical models
Modelling
MOSFETs
Optical Devices
Optics
Original Paper
Parameters
Performance enhancement
Photonics
Poisson equation
Polymer Sciences
Semiconductors
Silicon
Simulation
Tantalum
Tantalum oxides
Transconductance
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Summary:In each complementary metal-oxide-semiconductor (CMOS) technology generation, design of new device architectures at nanoscale regime becomes quite challenging task due to increased short channel effects (SCEs) and leakage current. A double-gate (DG) MOSFET is an alternative structure. To enhance the performance of DG MOSFET, gate stack (GS) and dual-material gate (DMG) with graded-channel (GC) concepts are amalgamated. Analytical surface potential modeling of GCGS DMDG MOSFET has been done by solving the two-dimensional (2D) Poisson’s equation with suitable boundary conditions. The surface potential profile of GCGS DMDG MOSFET shows a step variation at the interface of two materials. The electrical parameters drain induced barrier lowering (DIBL), sub-threshold swing (SS) and on-current to off-current I on I off ratio reveals that, DMDG shows a better performance over single-material (SM) DG MOSFET with all (Si 3 N 4 , HfO 2 and Ta 2 O 5 ) GS high-k dielectric configurations. An enhanced performance in GCGS DMDG is due to the fact of increased average carrier velocity, reduced drain field effect and leakage current. Further, analog/RF performance parameters such as transconductance ( g m ), transconductance generation factor (TGF), cut-off frequency ( f T ), transconductance generation frequency product (TGFP), gain frequency product (GFP) and gain transconductance frequency product (GTFP) are extracted and compared for both SMDG and DMDG MOSFET with HfO 2 GS configuration. The efficacy of analytically modeled results is compared with numerically simulated results obtained from 2D ATLAS device simulator.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-018-9826-z