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Development of low band gap layered Bi6FeNiTi3O18 aurivillius phase ceramics for ferroelectric memory and cathode for lithium-oxygen batteries applications
The layered multiferroic perovskite oxides are excellent functional materials for ferroelectric memory applications and also show application potential for cathode materials in lithium-oxygen battery due to high surface area, good stability, easy processing and low price. Synthesis of uniformly dist...
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Published in: | Journal of materials science. Materials in electronics 2024-02, Vol.35 (6), p.433, Article 433 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The layered multiferroic perovskite oxides are excellent functional materials for ferroelectric memory applications and also show application potential for cathode materials in lithium-oxygen battery due to high surface area, good stability, easy processing and low price. Synthesis of uniformly distributed layered perovskite oxides with low band gap, ionic-conducting and ferroelctric nature is still challenging. In this work, we have synthesized a new single-phase aurivillius phase Bi
6
FeNiTi
3
O
18
ceramics by high-energy ball mill mechano-chemical reaction. The Rietveld refinement of XRD data reveals that the compound Bi
6
FeNiTi
3
O
18
shows orthorhombic structure with space group P2/m and SEM images confirm the uniform layered morphology. Bi
6
FeNi Ti
3
O
18
ceramic have shown very high T
c
of 450 °C and typical relaxor behaviour. Impedance analysis reveals the effect of grains, grain boundaries and electrode on conductivity. Ferroelectric nature is confirmed by obtained P-E loop at room temperature. We also report much lower band gap (
E
g
= 1.87 eV) as compared to Bi
6
Fe
2
Ti
3
O
18
(
E
g
= 3.2 eV) ceramics which is due to Ni 3d state formation below Fe 3d state. The present work provide new path to engineer the functional properties of perovskite oxides for memory and energy storage applications. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-024-12215-1 |