Internal Loss in Diode Lasers with Quantum Well-Dots

The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determin...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2023-11, Vol.57 (11), p.513-518
Main Authors: Zhukov, A. E., Nadtochiy, A. M., Kryzhanovskaya, N. V., Shernyakov, Yu. M., Gordeev, N. Yu, Serin, A. A., Mintairov, S. A., Kalyuzhnyy, N. A., Payusov, A. S., Kornyshov, G. O., Maximov, M. V., Wang, Y.
Format: Article
Language:English
Subjects:
Laser arrays
Laser cavities
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum dots
Quantum wells
Semiconductor lasers
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Summary:The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determine the free-carrier absorption in the active region and in the waveguiding layer. The optimal design of the laser diode was determined to achieve the highest external differential efficiency.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782623090191