Scattering Singularity in Topological Dielectric Photonic Crystals

The exploration of topology in natural materials and metamaterials has garnered significant attention. Notably, the one-dimensional (1D) and two-dimensional (2D) Su-Schrieffer-Heeger (SSH) model, assessed through tight-binding approximations, has been extensively investigated in both quantum and cla...

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Bibliographic Details
Published in:arXiv.org 2024-03
Main Authors: Xiong, Langlang, Jiang, Xunya, Hu, Guangwei
Format: Article
Language:English
Subjects:
Metamaterials
Photonic crystals
Plane waves
Scattering
Singularities
Topology
Two dimensional analysis
Wave physics
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Summary:The exploration of topology in natural materials and metamaterials has garnered significant attention. Notably, the one-dimensional (1D) and two-dimensional (2D) Su-Schrieffer-Heeger (SSH) model, assessed through tight-binding approximations, has been extensively investigated in both quantum and classical systems, encompassing general and higher-order topology. Despite these advancements, a comprehensive examination of these models from the perspective of wave physics, particularly the scattering view, remains underexplored. In this study, we systematically unveil the origin of the 1D and 2D Zak phases stemming from the zero-scattering point, termed the scattering singularity in k-space. Employing an expanded plane wave expansion, we accurately compute the reflective spectrum of an infinite 2D photonic crystal (2D-PhC). Analyzing the reflective spectrum reveals the presence of a zero-scattering line in the 2D-PhC, considered the topological origin of the non-trivial Zak phase. Two distinct models, representing omnidirectional non-trivial cases and directional non-trivial cases, are employed to substantiate these findings. Our work introduces a novel perspective for characterizing the nature of non-trivial topological phases. The identification of the zero-scattering line not only enhances our understanding of the underlying physics but also provides valuable insights for the design of innovative devices.
ISSN:2331-8422