Potential improvement in power factor of (Bi0.98Ge0.02)2Te2.7Se0.3 compound due to defect engineering

In recent years, thermoelectricity has gained popularity as a renewable energy source, with applications including Peltier coolers and thermoelectric generators, particularly focusing on materials, like bismuth telluride and its doped derivatives. This study investigates Bi 2 Te 3 , (Bi 0.98 Ge 0.02...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2024-05, Vol.35 (13), p.901, Article 901
Main Authors: Shirodkar, Swaraangi, Prabhu, A. N., Putran, Suchitra, Rao, Ashok, Shanubhogue, U. Deepika, Hegde, Ganesh Shridhar
Format: Article
Language:English
Subjects:
Bismuth tellurides
Characterization and Evaluation of Materials
Chemical composition
Chemical synthesis
Chemistry and Materials Science
Coolers
Defects
Efficiency
Energy
Engineering
Heat conductivity
Higher education
Homogeneity
Materials Science
N-type semiconductors
Nanowires
Optical and Electronic Materials
Physics
Power factor
Renewable energy sources
Seebeck effect
Selenium
Temperature
Thermoelectric generators
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Summary:In recent years, thermoelectricity has gained popularity as a renewable energy source, with applications including Peltier coolers and thermoelectric generators, particularly focusing on materials, like bismuth telluride and its doped derivatives. This study investigates Bi 2 Te 3 , (Bi 0.98 Ge 0.02 ) 2 Te 2.7 Se 0.3 , and (Bi 0.98 Ge 0.02 ) 2 Te 2.7 Se 0.3 /Bi 2 Te 3 synthesized via solid-state reaction, revealing a rhombohedral structure in the XRD pattern and confirming chemical composition and composite homogeneity through EDS and porosity, density, and selenium integration via FESEM. Electrical resistivity decreases with rising temperature, while the Seebeck coefficient shows a linear increase, indicating n-type semiconductor behaviour. The highest power factor of 108  μW/mK 2 is achieved by (Bi 0.98 Ge 0.02 ) 2 Te 2.7 Se 0.3 , contrasting with the lowest of 20 μW /mK 2 observed for the pristine sample at 250 °C. Ge atoms enhance the power factor of (Bi 0.98 Ge 0.02 ) 2 Te 2.7 Se 0.3 by 5.4 times compared to the pristine compound, making it ideal for thermoelectric applications through acceptor behaviour and defect engineering.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12673-7