Tuning of power factor in bismuth selenide through Sn/Te co doping for low temperature thermoelectric applications

The physical parameters of solid-state produced tin and tellurium co-doped bismuth selenide polycrystalline crystals were described. Powder X-ray diffraction revealed the hexagonal structure in the samples’ phase domination. A field emission scanning electron microscope was used to analyze the surfa...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2024-07, Vol.130 (7), Article 516
Main Authors: Hegde, Ganesh Shridhar, Prabhu, Ashwatha Narayana, Nayak, Ramakrishna, Yang, C. F., Kuo, Y. K.
Format: Article
Language:English
Subjects:
Antisite defects
Bismuth
Characterization and Evaluation of Materials
Condensed Matter Physics
Crystal defects
Electrical resistivity
Field emission
Figure of merit
Low temperature
Machines
Manufacturing
N-type semiconductors
Nanotechnology
Optical and Electronic Materials
Physical properties
Physics
Physics and Astronomy
Power factor
Processes
Seebeck effect
Surfaces and Interfaces
Tellurium
Thermal conductivity
Thermoelectricity
Thin Films
Tin
X ray powder diffraction
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Summary:The physical parameters of solid-state produced tin and tellurium co-doped bismuth selenide polycrystalline crystals were described. Powder X-ray diffraction revealed the hexagonal structure in the samples’ phase domination. A field emission scanning electron microscope was used to analyze the surface microstructure. Thermoelectric properties such as Seebeck coefficient, electrical resistivity, and thermal conductivity were analyzed in the temperature range 10–350 K. The electrical resistivity of (Bi 0.96 Sn 0.04 ) 2 Se 2.7 Te 0.3 was found to be four times lower than that of pure Bi 2 Se 3 . Due to donor-like effects and antisite defects, the Seebeck coefficient demonstrates a p- to n- type semiconducting transition. When compared to pure Bi 2 Se 3 , power factor and thermoelectric figure of merit of (Bi 0 . 96 Sn 0.04 ) 2 Se 2.7 Te 0.3 is found to increase by 15 and 9 times respectively. Tellurium excess boosts tin vacancies, promoting the p to n- type transition in (Bi 0 . 96 Sn 0.04 ) 2 Se 2.7 Te 0.3 , making it a good option for low temperature thermoelectric and sensor applications.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-024-07653-x