Area Efficient 0.009-mm2 28.1-ppm/°C 11.3-MHz ALL-MOS Relaxation Oscillator

• Published in: IEEE transactions on very large scale integration (VLSI) systems 2024-10, Vol.32 (10), p.1900-1907
• Main Authors: Wijaya, Joshua Adiel, Chen, Poki, Kumar Pradhan, Lucky, Shahid Bhatti, Ahmad, Kajihara, Seiji
• Format: Article
• Language: English
• Subjects: ALL-MOS; Capacitors; complementary to absolute temperature (CTAT); Counterbalances; Digital audio players; Low temperature; MOS capacitor; MOSFET; Oscillators; proportional to absolute temperature (PTAT); Relaxation circuits; relaxation oscillator; Relaxation oscillators; Resistors; Temperature; Temperature compensation; Temperature sensors; virtual resistor
• ISSN: 1063-8210; 1557-9999
• DOI: 10.1109/TVLSI.2024.3416992

This article presents an ultrasmall area on-chip relaxation oscillator with low-temperature sensitivity. In this design, a virtual resistor mainly composed of a complementary to absolute temperature (CTAT) voltage reference circuit is implemented to replace the real resistor for efficient temperature compensation, which counterbalances the inherent proportional to absolute temperature (PTAT) property of the original relaxation circuit of the oscillator. The conventional capacitor is also replaced with a MOS capacitor to complete the ALL-MOS oscillator circuit with two prime advantages, one of which is larger capacitance to area density, and the other is better matching with critical MOSFETs. Implemented in a 0.18- \mu m TSMC standard CMOS process, the proposed relaxation oscillator has achieved a temperature coefficient of 28.17 ppm/°C over the temperature range from - 25~^{\circ } C to + 125~^{\circ } C at 11.39-MHz oscillation frequency. This circuit consumes 243.1~\mu W under 1.3-V power supply. Along with the abovementioned excellent performance, the oscillator achieves an ultrasmall core chip area of 0.009 mm2, which is almost one order less than most of the prior arts' in the same process.