Investigation of 100-kW Class Photoconductive Semiconductor Device With Wide Bandwidth Using Resonance Enhancement and Parameter Decoupling

In this study, we present a novel wide-bandwidth photoconductive semiconductor power device, specifically designed for high-power radio frequency (RF) applications. Leveraging a resonance enhancement mechanism, the device demonstrates substantial improvements in both bandwidth and power output. Expe...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2024-12, Vol.71 (12), p.7702-7708
Main Authors: Niu, Xinyue, Yang, Yufei, Zeng, Linglong, Gu, Yanran, He, Ting, Wang, Langning, Xun, Tao, Zhang, Jiande
Format: Article
Language:English
Subjects:
Bandwidth
Bandwidths
Carrier lifetime
Carrier lifetime evaluation
Decoupling method
Electrodes
high-power radio frequency (RF)
Integrated circuit modeling
Material properties
material-circuit parameter decoupling
Mathematical models
Parameters
photoconductive semiconductor device
Power generation
Power semiconductor devices
Quantum efficiency
Radio frequency
Resonance
resonance enhancement
Resonant frequency
Service life assessment
Silicon carbide
Voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, we present a novel wide-bandwidth photoconductive semiconductor power device, specifically designed for high-power radio frequency (RF) applications. Leveraging a resonance enhancement mechanism, the device demonstrates substantial improvements in both bandwidth and power output. Experimental results reveal that the device in the baseline state achieves a bandwidth ranging from 0.25 to 2.2 GHz. Under a bias voltage of 18 kV and a single pulse light energy of 12 mJ, the device delivers a microwave output power exceeding 78 kW, with a peak power reaching 137 kW. Notably, in its resonance-enhanced state, the device exhibits a 175% increase in output power at 1.2 GHz compared with the baseline state. Furthermore, we introduce a material-circuit parameter decoupling method, which facilitates the analysis of material properties and enables precise prediction of the device's bandwidth. Through this method, we rapidly determined the carrier lifetime (46.08 ps) and quantum efficiency (0.11) of the 4H-SiC material, with the model exhibiting a prediction deviation of less than 2.1 ps across multiple frequency points. Finally, the underlying factors influencing the bandwidth of these devices are also discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3485598