Patterned n+ implant into InP substrate for HBT subcollector

We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below the epitaxial layers. Device layers grown on implanted/annealed substrates were of similar quality to those on virgin InP. Maximum f/sub t/ and...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-10, Vol.51 (10), p.1736-1742
Main Authors: Chen, M.Y., Sokolich, M., Chow, D.H., Bui, S., Royter, Y., Hitko, D., Thomas, S., Fields, C.H., Rajavel, R.D., Biqiang Shi
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Electronics
Epitaxial growth
Exact sciences and technology
Heterojunction bipolar transistors
Indium compounds
Ion implantation
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor epitaxial layers
Transistors
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Summary:We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below the epitaxial layers. Device layers grown on implanted/annealed substrates were of similar quality to those on virgin InP. Maximum f/sub t/ and f/sub max/ of 240 and 310 GHz were obtained. We present the process flow, details of the ion implantation, layer characterization, and device results.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.835024