Physical insights on electron mobility in contemporary FinFETs

Calibration of a physics/process-based model for double-gate (DG) MOSFETs to contemporary nanoscale undoped n-channel DG FinFETs reveals that 1) significant densities of source/drain donor dopants readily diffuse to the ultrathin (fin) body/channel, even with relatively long fin extensions, degradin...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2006-06, Vol.27 (6), p.482-485
Main Authors: Chowdhury, M.M., Fossum, J.G.
Format: Article
Language:English
Subjects:
Applied sciences
Calibration
CMOS process
CMOS technology
Density
Drains
Eigenvalues and eigenfunctions
Electron mobility
Electronics
Exact sciences and technology
FinFETs
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
Particle scattering
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Si-fin dopant diffusion
Silicon
surface-roughness scattering
Transistors
ultrathin (fin) body (UTB) transport
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Calibration of a physics/process-based model for double-gate (DG) MOSFETs to contemporary nanoscale undoped n-channel DG FinFETs reveals that 1) significant densities of source/drain donor dopants readily diffuse to the ultrathin (fin) body/channel, even with relatively long fin extensions, degrading electron mobility at low/moderate levels of inversion-carrier density (N/sub inv/), 2) surface-roughness scattering of electrons is less severe at the {110} silicon-fin surfaces than anticipated, and 3) strong-inversion electron mobility is quite high (e.g., /spl cong/290 cm/sup 2//V/spl middot/s at N/sub inv/=10/sup 13/ cm/sup -2/), being about three times higher than that in contemporary bulk-Si MOSFETs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.874214