Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices

Due to a new quasi-ballistic extraction methodology dedicated to low-longitudinal-field conditions, experimental carrier mean-free-paths have been determined on strained and unstrained fully depleted silicon-on-insulator (n-FDSOI) devices with Si film thickness ranging from 11.8 to 2.5 nm, gate leng...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2009-03, Vol.8 (2), p.167-173
Main Authors: Barral, V., Poiroux, T., Barraud, S., Andrieu, F., Faynot, O., Munteanu, D., Autran, J.-L., Deleonibus, S.
Format: Article
Language:English
Subjects:
Acoustic scattering
Applied sciences
Channels
Charge
Coulomb scattering
Degradation
Devices
Electron mobility
Electronics
Engineering Sciences
Exact sciences and technology
Gates
Hafnium oxide
mean-free-path
Micro and nanotechnologies
Microelectronics
mobility
MOSFETs
Nanotechnology
Optical films
Optical scattering
quasi-ballistic transport
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Silicon films
Silicon on insulator technology
silicon-on-insulator (SOI) n-MOSFETs
strained devices
Technological innovation
Transistors
Transport
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Summary:Due to a new quasi-ballistic extraction methodology dedicated to low-longitudinal-field conditions, experimental carrier mean-free-paths have been determined on strained and unstrained fully depleted silicon-on-insulator (n-FDSOI) devices with Si film thickness ranging from 11.8 to 2.5 nm, gate length down to 30 nm, and a TiN/HfO 2 gate stack. Electron mobility evolution with the Si film thickness, reported in a previous study, is explored and quantitatively explained. Moreover, through inversion charge and temperature deep investigations, dominant carrier transport mechanisms are analyzed. It is experimentally revealed that transport degradation occurs in short and thin channels, which is shown to be mainly due to additional Coulomb scatterings rather than ballistic artifact in both strained and unstrained devices.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2008.2010128