Probing Ultrafast Carrier Dynamics in Silicon Nanowires

We present the first ultrafast optical pump-probe spectroscopic measurements, to the best of our knowledge, on silicon nanowires (SiNWs). In this study, we performed femtosecond pump-probe measurements on vapor-liquid-solid-grown SiNWs to investigate the influence of the NW diameter, pump and probe...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2011-07, Vol.17 (4), p.889-895
Main Authors: Kar, A., Upadhya, P. C., Dayeh, S. A., Picraux, S. T., Taylor, A. J., Prasankumar, R. P.
Format: Article
Language:English
Subjects:
Absorption
Carrier density
Carriers
Dynamics
Nanomaterials
Nanostructure
Nanotechnology
Nanowires
Optical pumping
optical spectroscopy
Photonic band gap
Photonics
Polarization
Probes
semiconductor materials
Silicon
Ultrafast optics
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Summary:We present the first ultrafast optical pump-probe spectroscopic measurements, to the best of our knowledge, on silicon nanowires (SiNWs). In this study, we performed femtosecond pump-probe measurements on vapor-liquid-solid-grown SiNWs to investigate the influence of the NW diameter, pump and probe polarizations, and pump fluence on the observed dynamics while tuning the probe wavelength below and above the indirect bandgap in Si. For smaller NW diameters, carriers were found to relax more rapidly into both extended and localized states, indicating that a surface-mediated mechanism governs the observed dynamics. The magnitude of the photoinduced transmission change exhibited strong polarization dependence, showing that optical transitions in these quasi-1D systems are highly polarized along the NW axis. Finally, density-dependent experiments revealed that the relaxation time decreases with increasing photoexcited carrier density for an above bandgap probe; however, no significant density-dependent changes in the relaxation dynamics were observed when probed below the bandgap. In short, our experiments reveal the influence of diameter, polarization, and carrier density on carrier dynamics in SiNWs, shedding light on the phenomena that govern carrier relaxation in these important nanosystems and giving insight on their future use in nanophotonic applications.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2010.2076399