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Electronic transport of graphene nanoribbons within recursive Green’s function
► We have investigated transport properties in a GNR with armchair and zigzag edges attached to square lattice leads. ► The method is based on a recursive Green’s function. ► This model reduces numerical calculations time. ► The results are strongly affected by the quantum interference effect. In th...
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Published in: | Superlattices and microstructures 2012-04, Vol.51 (4), p.523-532 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ► We have investigated transport properties in a GNR with armchair and zigzag edges attached to square lattice leads. ► The method is based on a recursive Green’s function. ► This model reduces numerical calculations time. ► The results are strongly affected by the quantum interference effect.
In this work, we introduce a recursive Green’s function method for investigating electronic transport in a graphene nanoribbons (GNRs) quantum wire with armchair (AGNR) and zigzag (ZGNR) edges which attached to two semi-infinite square lattice leads. This model reduces numerical calculations time and enables us to use Green’s function method to investigate transport in a supperlattice device. Therefore, we consider AGNR and ZGNR devices attached to metallic semi-infinite square lattice leads, taking into account the effects of longitudinal and wide of the wire. Our calculations are based on the tight-binding model, which the recursive Green’s function method is used to solve inhomogeneous differential equations. We concentrate on the electrical conductance and current for various length and wide size of the wire. Our numerical results show that the transport properties are strongly affected by the quantum interference effect and the lead interface geometry to the device. By controlling the type of contact and wire geometry, this kind of system can explain the antiresonance states at the Fermi energy. Our results can serve as a base for developments in designing nano-electronic devices. |
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ISSN: | 0749-6036 1096-3677 |
DOI: | 10.1016/j.spmi.2012.01.016 |