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Efficient nanocoax-based solar cells

The power conversion efficiency of most thin film solar cells is compromised by competing optical and electronic constraints, wherein a cell must be thick enough to collect light yet thin enough to efficiently extract current. Here, we introduce a nanoscale solar architecture inspired by a well‐know...

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Published in:Physica status solidi. PSS-RRL. Rapid research letters 2010-07, Vol.4 (7), p.181-183
Main Authors: Naughton, M. J., Kempa, K., Ren, Z. F., Gao, Y., Rybczynski, J., Argenti, N., Gao, W., Wang, Y., Peng, Y., Naughton, J. R., McMahon, G., Paudel, T., Lan, Y. C., Burns, M. J., Shepard, A., Clary, M., Ballif, C., Haug, F.-J., Söderström, T., Cubero, O., Eminian, C.
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Language:English
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Summary:The power conversion efficiency of most thin film solar cells is compromised by competing optical and electronic constraints, wherein a cell must be thick enough to collect light yet thin enough to efficiently extract current. Here, we introduce a nanoscale solar architecture inspired by a well‐known radio technology concept, the coaxial cable, that naturally resolves this “thick–thin” conundrum. Optically thick and elec‐ tronically thin amorphous silicon “nanocoax” cells are in the range of 8% efficiency, higher than any nanostructured thin film solar cell to date. Moreover, the thin nature of the cells reduces the Staebler–Wronski light‐induced degradation effect, a major problem with conventional solar cells of this type. This nanocoax represents a new platform for low cost, high efficiency solar power. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) In this Letter, the authors introduce a nanoscale solar architecture inspired by a well‐known radio technology concept, the coaxial cable. The electron microscope image shows an array of nanocoax solar cells that forms the basis of an optically thick, electronically thin, high efficiency solar photovoltaic technology. Spaced 900 nm apart, these nanocoaxes are fabricated from metallized nanopillars coated with amorphous silicon radial p–i–n junctions and indium tin oxide.
ISSN:1862-6254
1862-6270
1862-6270
DOI:10.1002/pssr.201004154