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Syntheses, structure and properties of vinylogous EDO-TTFs
We synthesized vinylogous 4,5-ethylenedioxy-tetrathiafulvalenes (EDO-TTFs), 4,5-ethylenedioxy-2,2′-ethanediylidenebis(1,3-dithiole) (EDO-EBDT), 4,5-dimethyl-4′,5′-ethylenedioxy-2,2′-ethanediylidenebis(1,3-dithiole) (DMEDO-EBDT), 4,5-bis(thiomethyl)-4′,5′-ethylenedioxy-2,2′-ethanediylidenebis(1,3-dit...
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Published in: | Physica. B, Condensed matter Condensed matter, 2010-06, Vol.405 (11), p.S61-S64 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We synthesized vinylogous 4,5-ethylenedioxy-tetrathiafulvalenes (EDO-TTFs), 4,5-ethylenedioxy-2,2′-ethanediylidenebis(1,3-dithiole) (EDO-EBDT), 4,5-dimethyl-4′,5′-ethylenedioxy-2,2′-ethanediylidenebis(1,3-dithiole) (DMEDO-EBDT), 4,5-bis(thiomethyl)-4′,5′-ethylenedioxy-2,2′-ethanediylidenebis(1,3-dithiole) (BTMEDO-EBDT), and 4,5-bis(methoxycarbonyl)-4′,5′-ethylenedioxy-2,2′-ethanediylidenebis(1,3-dithiole) (BMCEDO-EBDT). The cyclic voltammograms of the vinylogous EDO-TTFs show two pairs of single-electron redox waves. The first oxidation potentials (
E
1) of vinylogous EDO-TTFs are lower than those of the related TTFs, indicating that the electron donating abilities of new donors are stronger than those of the corresponding TTFs. The smaller
E
2−
E
1 values of new donors compared with those of the related TTFs suggest a decrease in the on-site Coulombic repulsion in the dication state. X-ray crystal structure analysis of BMCEDO-EBDT reveals that the inter-molecular C-H⋯O type hydrogen bond is constructed between the hydrogen atom and the oxygen atom of the ethylenedioxy group. Single crystalline TCNQ complexes of DMEDO-EBDT and BTMEDO-EBDT have been prepared and their conducting properties and crystal structure have been investigated. The TCNQ complexes of DMEDO-EBDT and BTMEDO-EBDT show low electrical conductivities (
σ
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2009.12.024 |