The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures

• Published in: Journal of alloys and compounds 2013-11, Vol.577, p.143-147
• Main Authors: Altuntas, H., Ozcelik, S.
• Format: Article
• Language: English
• Subjects: Alloys; Applied sciences; Au/SiO2/GaAs Schottky diodes; Barriers; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Diodes; Electron and ion emission by liquids and solids; impact phenomena; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Gold; Insulator layer; Interface states; Interfaces; I–V characteristics; Metal oxide semiconductors; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon dioxide; Surface double layers, schottky barriers, and work functions; Temperature dependence; Thermionic emission
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2013.04.098

•In this study, I–V characterizations of Au/SiO2/n-GaAs SBDs were carried out.•The measurements were done in the temperature range of 300–400K.•Main electrical parameters were obtained using the thermionic emission mechanism.•Results show that the electrical parameters depend on temperature very strongly. The current–voltage (I–V) characteristics of Au/SiO2/n-GaAs metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) have been measured in the temperature range of 300–400K with 25K steps. From the I–V characteristics of SBDs, the zero-bias barrier height ϕBo and ideality factor (n) assuming the thermionic emission (TE) mechanism show strong temperature dependence. While n decreases, ϕBo increases with increasing temperature. The obtained values of ϕBo and n varied from 0.81eV and 1.33 at 300K and 0.93eV and 1.12 at 400K, respectively. In addition, the interface states distribution profile (Nss) as a function of temperature was extracted from the forward-bias I–V measurements by taking into account the bias dependence of the effective barrier height ϕe and series resistance (Rs) for the SBDs. The values of Rs were performed using the Cheung’s method. Thus, important electrical parameters as a function of temperature were analyzed by using the I–V measurements.