Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode

We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size d...

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Bibliographic Details
Published in:Microelectronic engineering 2013-12, Vol.112, p.92-96
Main Authors: Chen, Y.Y., Goux, L., Pantisano, L., Swerts, J., Adelmann, C., Mertens, S., Afanasiev, V.V., Wang, X.P., Govoreanu, B., Degraeve, R., Kubicek, S., Paraschiv, V., Verbrugge, B., Jossart, N., Altimime, L., Jurczak, M., Kittl, J., Groeseneken, G., Wouters, D.J.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar switching
Deposition
Design. Technologies. Operation analysis. Testing
Electric potential
Electrodes
Electronics
Exact sciences and technology
Hafnium oxide
HfO2
Integrated circuits
Integrated circuits by function (including memories and processors)
Microelectronic fabrication (materials and surfaces technology)
PEALD TiN
Plasma pre-treatment
RRAM
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stacks
Switching
Tin
Voltage
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Summary:We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275nm2 (35nm×65nm). Stable switching was observed between a High-Resistive State HRS (∼1MΩ) and a Low-Resistive State LRS (∼100kΩ), using a low program current of ∼1μA. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100μA (high-CC LRS) or 10μA (low-CC LRS), resulting, respectively in LRS resistances of 10kΩ or 100kΩ. The projected retention stability of low-CC LRS is ⩾10years at 80°C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (∼100kΩ), suggesting gentle filament formation.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2013.02.087