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Conductance Control in VO2 Nanowires by Surface Doping with Gold Nanoparticles

The material properties of semiconductor nanowires are greatly affected by electrical, optical, and chemical processes occurring at their surfaces because of the very large surface-to-volume ratio. Precise control over doping as well as the surface charge properties has been demonstrated in thin fil...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2014-09, Vol.6 (17), p.14812-14818
Main Authors: Kim, Gil-Ho, Kwak, Youngreal, Lee, Inyeal, Rathi, Servin, Baik, Jeong Min, Yi, Kyung Soo
Format: Article
Language:English
Online Access:Get full text
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Summary:The material properties of semiconductor nanowires are greatly affected by electrical, optical, and chemical processes occurring at their surfaces because of the very large surface-to-volume ratio. Precise control over doping as well as the surface charge properties has been demonstrated in thin films and nanowires for fundamental physics and application-oriented research. However, surface doping behavior is expected to differ markedly from bulk doping in conventional semiconductor materials. Here, we show that placing gold nanoparticles, in controlled manner, on the surface of an insulating vanadium dioxide nanowire introduces local charge carriers in the nanowire, and one could, in principle, completely and continuously alter the material properties of the nanowire and obtain any intermediate level of conductivity. The current in the nanowire increased by nearly 3 times when gold nanoparticles of 1011 cm–2 order of density were controllably placed on the nanowire surface. A strong quadratic space-charge limited (SCL) transport behavior was also observed from the conductance curve suggesting the formation of two-dimensional (2D) electron-gas-like confined layer in the nanowire with adsorbed Au NPs. In addition to stimulating scientific interest, such unusual surface doping phenomena may lead to new applications of vanadium dioxide-based electronic, optical, and chemical sensing nanodevices.
ISSN:1944-8244
1944-8252
DOI:10.1021/am504229n