Structures, electrical and optical properties of nickel oxide films by radio frequency magnetron sputtering

• Published in: Vacuum 2014-05, Vol.103, p.14-16
• Main Authors: Zhao, Y., Wang, H., Wu, C., Shi, Z.F., Gao, F.B., Li, W.C., Wu, G.G., Zhang, B.L., Du, G.T.
• Format: Article
• Language: English
• Subjects: Deposition; Electrical properties; Magnetron sputtering; Nickel oxide; Nickel oxides; Optical properties; Oxygen partial pressures; Partial pressure; Radio frequencies; Scanning electron microscopy
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2013.11.009

The NiO films were sputtered by radio frequency (rf) magnetron sputtering at different oxygen partial pressures. The structures, electrical and optical properties of the NiO films were investigated. The resulting films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet–visible spectrophotometer (UV). The electrical properties were measured by Hall system. The results show that the NiO films deposited at room temperature with the ratio of oxygen partial pressures varying from 0 to 80% develop only (200) preferred orientation and very high optical transmittances. The lowest resistivity of 2.368 Ω cm and highest carrier density of 2.235 × 1019 cm−3 could be obtained. Comparatively, the controllable electrical properties of the films can be achieved by the variation of crystal quality arises from the oxygen partial pressures. •NiO films were sputtered by magnetron sputtering at different O2 partial pressures.•High crystal quality NiO films could be obtained at higher O2 partial pressures.•The resistivities of NiO films decreased with increasing the O2 partial pressures.•Optical transmittances of NiO films were improved at higher O2 partial pressures.