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Extreme-Value Statistics and Poisson Area Scaling With a Fatal-Area Ratio for Low- k Dielectric TDDB Modeling
During the study of time-dependent dielectric breakdown (TDDB) of back-end-of-line low- k dielectrics, accurate statistical and area-scaling models are important for the final reliability lifetime projection. The extrapolated product lifetime from high percentiles to low percentiles has strong depen...
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Published in: | IEEE transactions on electron devices 2011-09, Vol.58 (9), p.3089-3098 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | During the study of time-dependent dielectric breakdown (TDDB) of back-end-of-line low- k dielectrics, accurate statistical and area-scaling models are important for the final reliability lifetime projection. The extrapolated product lifetime from high percentiles to low percentiles has strong dependence on the choice of a statistical model. Meanwhile, the lifetime of a product chip is obtained typically by extrapolating TDDB data from small test structures to large chip areas by an area-scaling law. In this paper, a thorough investigation of low- k TDDB statistical distribution with large sample size and various metal areas was conducted to validate a physically relevant statistical model for low- k TDDB modeling. In addition, we explored the various TDDB dependence on metal area and introduced a new fatal-area-ratio concept for low- k TDDB area-scaling model in the event that the conventional Poisson area-scaling law failed based on the as-designed area ratio. A graphic shift-and-compare method was then developed to determine, experimentally, the fatal-metal-area ratio. The determination of the fatal-metal-area ratio should be critical for an accurate low- k TDDB lifetime projection and process assessment. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2011.2159120 |