Heteroepitaxial nucleation and growth of graphene nanowalls on silicon

Heteroepitaxial nucleation of {002} graphene sheets on {111} facets of plasma treated (100) silicon by direct-current plasma enhanced chemical vapor deposition in methane–hydrogen gas mixtures is confirmed by high-resolution transmission electron microscopy. Lattice mismatch by 12% is compensated by...

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Bibliographic Details
Published in:Carbon (New York) 2013-04, Vol.54, p.234-240
Main Authors: Tu, Chia-Hao, Chen, Waileong, Fang, Hsin-Chiao, Tzeng, Yonhua, Liu, Chuan-Pu
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Excitation
Graphene
Lattices
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nucleation
Other materials
Other topics in nanoscale materials and structures
Physics
Scanning electron microscopy
Silicon
Specific materials
Theory and models of film growth
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Summary:Heteroepitaxial nucleation of {002} graphene sheets on {111} facets of plasma treated (100) silicon by direct-current plasma enhanced chemical vapor deposition in methane–hydrogen gas mixtures is confirmed by high-resolution transmission electron microscopy. Lattice mismatch by 12% is compensated by tilting the graphene {002} with respect to silicon {111} and matching the silicon lattice with fewer graphene layers. The interlayer spacing of graphene sheets near the silicon surface is 0.355nm, which is larger than that of AB stacked graphite and confirmed as AA stacked graphitic phase. Subsequent growth of standing graphene nanowalls is characterized by scanning electron microscopy and Raman scattering (633 and 514nm excitation). The Raman peaks of D-band, G-band, and 2D-band are discussed in correlation with SEM images of graphene nanowalls. A strong Raman peak corresponding to silicon–hydrogen stretch vibration is detected by 633nm excitation at the early stage of graphene nucleation, indicating the silicon substrate etched by hydrogen plasma. With these analyses, the growth mechanism is also proposed in this paper.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2012.11.034