Lithography and doping in strained Si towards atomically precise device fabrication

We investigate the ability to introduce strain into atomic-scale silicon device fabrication by performing hydrogen lithography and creating electrically active phosphorus [delta]-doped silicon on strained silicon-on-insulator (sSOI) substrates. Lithographic patterns were obtained by selectively deso...

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Bibliographic Details
Published in:Nanotechnology 2014-04, Vol.25 (14), p.1-8
Main Authors: Lee, W C T, McKibbin, S R, Thompson, D L, K, Xue, G, Scappucci, N, Bishop, Geller, G K, Carroll, M S, Simmons, M Y
Format: Article
Language:English
Subjects:
Carrier density
Devices
Doping
Lithography
Silicon
Silicon devices
Silicon substrates
Strain
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Summary:We investigate the ability to introduce strain into atomic-scale silicon device fabrication by performing hydrogen lithography and creating electrically active phosphorus [delta]-doped silicon on strained silicon-on-insulator (sSOI) substrates. Lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat sSOI(001) surface with a scanning tunnelling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process was investigated allowing us to pattern feature-sizes from several microns down to 1.3 nm. In parallel we have investigated the impact of strain on the electrical properties of P:Si [delta]-doped layers. Despite the presence of strain inducing surface variations in the silicon substrate we still achieve high carrier densities (> 1.0 x 10 super(14) cm super(-2)) with mobilities of ~100 cm super(2) V super(-1) s super(-1). These results open up the possibility of a scanning-probe lithography approach to the fabrication of strained atomic-scale devices in silicon.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/25/14/145305