Evaluation of thermal performance of all-GaN power module in parallel operation

This work presents an extensive thermal characterization of a single discrete GaN high-electron-mobility transistor (HEMT) device when operated in parallel at temperatures of 25 °C–175 °C. The maximum drain current (ID max), on-resistance (RON), pinch-off voltage (VP) and peak transconductance (gm)...

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Bibliographic Details
Published in:Applied thermal engineering 2014-09, Vol.70 (1), p.593-599
Main Authors: Chou, Po-Chien, Cheng, Stone, Chen, Szu-Hao
Format: Article
Language:English
Subjects:
Applied sciences
Devices
Energy
Energy. Thermal use of fuels
Exact sciences and technology
Gallium nitrides
GaN HEMTs
Heat transfer
High electron mobility transistors
Parallel operation
Power module
Power semiconductor devices
Semiconductor devices
Static parameters
Theoretical studies. Data and constants. Metering
Thermal engineering
Thermal properties
Transistors
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Summary:This work presents an extensive thermal characterization of a single discrete GaN high-electron-mobility transistor (HEMT) device when operated in parallel at temperatures of 25 °C–175 °C. The maximum drain current (ID max), on-resistance (RON), pinch-off voltage (VP) and peak transconductance (gm) at various chamber temperatures are measured and correlations among these parameters studied. Understanding the dependence of key transistor parameters on temperature is crucial to inhibiting the generation of hot spots and the equalization of currents in the parallel operation of HEMTs. A detailed analysis of the current imbalance between two parallel HEMT cells and its consequential effect on the junction temperature are also presented. The results from variations in the characteristics of the parallel-connected devices further verify that the thermal stability and switching behavior of these cells are balanced. Two parallel HEMT cells are operated at a safe working distance from thermal runaway to prevent destruction of the hottest cell. •This work reveals the sorting process of GaN devices for parallel operation.•The variations of ID max, RON, VP, and gm with temperature are established.•The temperature-dependence parameters are crucial to prevent hot spots generation.•Safe working operation prevents thermal runaway and hottest cell destruction.
ISSN:1359-4311
DOI:10.1016/j.applthermaleng.2014.05.081