Wafer-scale synthesis of thickness-controllable MoS sub(2) films viasolution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system

The wafer-scale synthesis of two-dimensional molybdenum disulfide (MoS sub(2)) films, with high layer-controllability and uniformity, remains a significant challenge in the fields of nano and optoelectronics. Here, we report the highly thickness controllable growth of uniform MoS sub(2) thin films o...

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Bibliographic Details
Published in:Nanoscale 2015-05, Vol.7 (20), p.9311-9319
Main Authors: Yang, Jaehyun, Gu, Yeahyun, Lee, Eunha, Lee, Hyangsook, Park, Sang Han, Cho, Mann-Ho, Kim, Yong Ho, Kim, Yong-Hoon, Kim, Hyoungsub
Format: Article
Language:English
Subjects:
Channels
Concentration (composition)
Molybdenum disulfide
Nanostructure
Precursors
Solvents
Synthesis
Thin films
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Summary:The wafer-scale synthesis of two-dimensional molybdenum disulfide (MoS sub(2)) films, with high layer-controllability and uniformity, remains a significant challenge in the fields of nano and optoelectronics. Here, we report the highly thickness controllable growth of uniform MoS sub(2) thin films on the wafer-scale viaa spin-coating route. Formulation of a dimethylformamide-based MoS sub(2) precursor solution mixed with additional amine- and amino alcohol-based solvents (n-butylamine and 2-aminoethanol) allowed for the formation of a uniform coating of MoS sub(2) thin films over a 2 inch wafer-scale SiO sub(2)/Si substrate. In addition, facile control of the average number of stacking layers is demonstrated by simply manipulating the concentration of the precursor solution. Various characterization results reveal that the synthesized MoS sub(2) film has wafer-scale homogeneity with excellent crystalline quality and a stoichiometric chemical composition. To further demonstrate possible device applications, a mostly penta-layered MoS sub(2) thin film was integrated into a top-gated field-effect transistor as the channel layer and we also successfully transferred our films onto transparent/flexible substrates.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr01486g