Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces

During the chemical mechanical polishing (CMP) of an indium phosphide buffer layer for the fabrication of InGaAs n-channels in CMOS devices, there is interest in controlled removal of In and P atoms from the surface and avoidance of the generation of toxic phosphine (PH3) gas. We report InP removal...

Full description

Saved in:
Bibliographic Details
Published in:Industrial & engineering chemistry research 2013-08, Vol.52 (31), p.10664-10672
Main Authors: Matovu, John B, Ong, Patrick, Leunissen, Leonardus H. A, Krishnan, Sitaraman, Babu, S. V
Format: Article
Language:English
Subjects:
Carboxylic acids
Dispersions
Hydrogen peroxide
Indium phosphides
Mechanical polishing
Phosphines
Slurries
X-ray photoelectron spectroscopy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:During the chemical mechanical polishing (CMP) of an indium phosphide buffer layer for the fabrication of InGaAs n-channels in CMOS devices, there is interest in controlled removal of In and P atoms from the surface and avoidance of the generation of toxic phosphine (PH3) gas. We report InP removal rates and phosphine generation during InP CMP in hydrogen peroxide based silica particle dispersions in the presence and absence of three different multifunctional chelating carboxylic acids, namely oxalic acid, tartaric acid, and citric acid. The presence of these acids in the polishing slurry resulted in highly smooth surfaces (about 0.1 nm RMS surface roughness) with good InP removal rates (about 400 nm min–1) and very low phosphine generation (
ISSN:0888-5885
1520-5045
DOI:10.1021/ie400689q