Raman scattering and electrical resistance of highly disordered graphene

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5 x 5 mm) industrial monolayer graphene film. Samples were irradiated by different doses...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-01, Vol.91 (4), Article 045414
Main Authors: Shlimak, I., Haran, A., Zion, E., Havdala, T., Kaganovskii, Yu, Butenko, A. V., Wolfson, L., Richter, V., Naveh, D., Sharoni, A., Kogan, E., Kaveh, M.
Format: Article
Language:English
Subjects:
Condensed matter
Disorders
Electrical resistance
Electron beam lithography
Graphene
Ion beams
Monolayers
Raman scattering
Spectra
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Summary:Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5 x 5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C super(+) ion beam up to 10 super(15) cm super(-2). It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics. These effects are explained by suggestion that highly disordered graphene film ceases to be continuous and splits into separate fragments. The relationship between structure (intensity of RS lines) and sample resistance is defined. It is shown that the maximal resistance of the continuous film is of the order of reciprocal value of the minimal graphene conductivity [pi]h/4e super(2) approximately 20 kOhm.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.91.045414