Acoustically regulated carrier injection into a single optically active quantum dot

We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral (X super(0)) and negatively charged (...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-08, Vol.88 (8), Article 085307
Main Authors: Schülein, Florian J. R., Müller, Kai, Bichler, Max, Koblmüller, Gregor, Finley, Jonathan J., Wixforth, Achim, Krenner, Hubert J.
Format: Article
Language:English
Subjects:
Acoustics
Carrier injection
Condensed matter
Excitons
Formations
Gallium arsenides
Qunatum dots
Single electrons
Trajectories
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Summary:We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral (X super(0)) and negatively charged (X super(-)) excitons. We identify underlying, characteristic formation pathways of both few-particle states in the time-domain experiments and show that both exciton species can be formed either with the optical pump or at later times by injection of single electrons and holes "surfing" the acoustic wave. All experimental observations are in excellent agreement with calculated electron and hole trajectories in the plane of the two-dimensional wetting layer which is dynamically modulated by the acoustically induced piezoelectric potentials. Taken together, our findings provide insight on both the onset of acoustoelectric transport of electrons and holes and their conversion into the optical domain after regulated injection into a single quantum dot emitter.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.88.085307