Single Event Gate Rupture in EMCCD technology

• Published in: Journal of instrumentation 2012-12, Vol.7 (12), p.1-8
• Main Authors: Evagora, AM, Murray, N J, Holland, AD, Burt, D
• Format: Article
• Language: English
• Subjects: Charge coupled devices; Devices; Electric fields; Failure; Gates; Heavy ions; Rupture; Space applications
• ISSN: 1748-0221; 1748-0221
• DOI: 10.1088/1748-0221/7/12/C12002

The high electric fields (typically 3 MV/cm super(2) interpoly field) utilised in Electron MultiplyingCharged Coupled Devices (EMCCDs) reveal a potential vulnerability from Single EventPhenomena (SEP), in particular Single Event Gate Rupture (SEGR). SEGR is where a conductionpath between two conductive areas of the CCD is produced, causing device failure. If EMCCDs areto be used for space applications the susceptibility to these events needs to be explored. A positiveresult from such an investigation can increase the technology readiness level of the device movingit another step closer to being used in space. Testing undertaken at the CYClotron of LOuvain la NEuve (CYCLONE), using the HeavyIon Facility (HIF), conclusively showed EMCCD technology to have resilience to heavy ions thatsurpassed initial expectations. The simulations undertaken prior to experiment suggested gate rupturewould occur at 20-40 MeV cm super(2)/mg, however Linear Energy Transfers (LETs) greater than 100 MeV cm super(2)/mg proved to not cause a rupture event. Within the radiation belts heavy ions withan LET greater than 60 MeV cm super(2)/mg are not very common when compared to the fluxes used atthe HIF. Possible reasons for this result are discussed in this work, leading to a conclusion that EMCCD technology is a secure choice for space flight.