Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure of InAs/GaAs QDs covered by a GaAsSb strain-reducing layer. Our results proved that type I or type II ban...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2013-03, Vol.46 (9), p.095103-1-6
Main Authors: Hospodková, A, Zíková, M, Pangrác, J, Oswald, J, Kubištová, J, Kuldová, K, Hazdra, P, Hulicius, E
Format: Article
Language:English
Subjects:
Alignment
Band alignment
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Covering
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
GaAsSb
Gallium arsenide
Gallium arsenides
Heterostructures
Iii-v semiconductors
InAs/GaAs
Indium arsenides
MOVPE
Optical materials
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Optics
Other nonlinear optical materials
photorefractive and semiconductor materials
Photoluminescence
Physics
Quantum dot
Quantum dots
Red shift
Wavelengths
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Summary:The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure of InAs/GaAs QDs covered by a GaAsSb strain-reducing layer. Our results proved that type I or type II band alignment can be controlled by both GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of the QD structure. The simulation of electron structure in InAs QDs covered with a GaAsSb strain-reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPE prepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV redshift in comparison with similarly prepared QDs covered by GaAs.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/46/9/095103