Probing the electronic properties of graphene on C-face SiC down to single domains by nanoresolved photoelectron spectroscopies

Graphene samples with thicknesses ranging from monolayer to few layer graphene grown on the C-face of SiC by Si flux-assisted molecular beam epitaxy were studied to understand their stacking structure. Particular attention was put on determining the size, thickness, spatial distribution, and orienta...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-07, Vol.92 (3), Article 035105
Main Authors: Razado-Colambo, I., Avila, J., Chen, C., Nys, J.-P., Wallart, X., Asensio, M.-C., Vignaud, D.
Format: Article
Language:English
Subjects:
Condensed matter
Grains
Graphene
Nanostructure
Orientation
Photoelectron spectroscopy
Silicon carbide
Stacking
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Summary:Graphene samples with thicknesses ranging from monolayer to few layer graphene grown on the C-face of SiC by Si flux-assisted molecular beam epitaxy were studied to understand their stacking structure. Particular attention was put on determining the size, thickness, spatial distribution, and orientation relative to the SiC of the graphene domains. A complete electronic characterization of the graphene films down to submicrometer grains was obtained by using synchrotron-based conventional and nanoresolved photoelectron spectroscopies. These measurements were completed with scanning probe techniques like atomic force and scanning tunneling microscopies. By probing exactly the same region of the samples using angular-resolved and core-level photoelectron spectroscopy imaging and point modes, we were able to identify two types of grains constituting the graphene films with radically different thickness, stacking and orientation. The size, distribution, and registry with the substrate for each type of grain were determined. Most interestingly, we have evidenced that multilayer graphene grains with Bernal stacking coexist with areas composed of twisted bilayer graphene grains.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.92.035105