Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize t...

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Bibliographic Details
Published in:Nanoscale 2015-11, Vol.7 (42), p.17702-17709
Main Authors: Park, Kyung Sun, Kim, Sejoon, Kim, Hongbum, Kwon, Deokhyeon, Lee, Yong-Eun Koo, Min, Sung-Wook, Im, Seongil, Choi, Hyoung Joon, Lim, Seulky, Shin, Hyunjung, Koo, Sang Man, Sung, Myung Mo
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Deposition
Grain boundaries
Grains
Graphene
Silicon substrates
Stitching
Zinc oxide
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Summary:Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr05392g