Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film

• Published in: Thin solid films 2015-06, Vol.584, p.135-140
• Main Authors: Cheng, S.-Y., Chen, K.-T., Chang, S.T.
• Format: Article
• Language: English
• Subjects: Channels; Devices; Hole mobility; Inversion layers; Mathematical analysis; p-Type metal-oxide-semiconductor field effect transistor; Silicon germanides; Silicon-germanium alloy; Strain; Thin films
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2015.01.047

Advanced MOSFET devices formed from Si-based materials, such as silicon-germanium alloys, are simple and low cost to manufacture. This work focuses on hole mobility in the inversion layer of PMOSFETs using alloy channel materials. The primary topic of this work is the theoretical calculation of effective mass and hole mobility in the silicon-germanium alloy p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) inversion layer. The strain conditions considered in the calculations are intrinsic strain resulting from growing the silicon-germanium alloy thin films on the three orientation Si substrates. The hole mobility of silicon-germanium alloy inversion layer for PMOSFET under substrate strain and various germanium mole fractions are all investigated. The impact of wafer orientation and channel direction on the hole mobility is analyzed using the Kubo–Greenwood formalism. •Impact of Strain effect and wafer orientation on hole mobility of silicon-germanium alloy PMOSFET.•Impact of germanium content on hole mobility of silicon-germanium alloy PMOSFET.•Physical insight of hole mobility enhancement in strained silicon-germanium alloy PMOSFET.