Study of triisopropylsilyl pentacene thin film and its interfacial properties for device applications

Two-hundred-nanometer-thick 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-Pentacene) films were formed on Si substrates by spin coating. The rms roughness of the spun dendrite-type films is ~40nm, determined by atomic force microscopy. Ordered crystalline structures were revealed by x-ray diff...

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Bibliographic Details
Published in:Thin solid films 2015-06, Vol.584, p.359-362
Main Authors: Wang, Ke, Chen, Ruofei, Zhuang, Fengjiang, Chen, Chuanwen, Su, Shaojian, Xiang, Yang
Format: Article
Language:English
Subjects:
Atomic structure
Depletion
Devices
Electrical characterization
Interfacial properties
Pentacene
Roughness
Silicon substrates
Thermionic emission
Thin films
Triisopropylsilyl Pentacene film
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Summary:Two-hundred-nanometer-thick 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-Pentacene) films were formed on Si substrates by spin coating. The rms roughness of the spun dendrite-type films is ~40nm, determined by atomic force microscopy. Ordered crystalline structures were revealed by x-ray diffraction measurement, and the dominated absorption band from the ordered structures was further confirmed by ultraviolet-visible spectroscopy. The current–voltage characteristics of the junctions formed using TIPS-Pentacene on n-type Si substrates show good rectifying behavior with rectification ratios over 100 at 1V. In the heterojunctions, barrier heights of ~0.8eV and ideality factors of ~2 were determined based on thermionic emission model. It shows that TIPS-Pentacene can work well with n-type Si to form Schottky-type rectifying devices. Capacitance–voltage measurement performed on the metal–insulator–semiconductor structure of TIPS-Pentacene on SiO2 shows obvious effects of accumulation and depletion in TIPS-Pentacene with bias. The maximum width of the depletion layer in TIPS-Pentacene is estimated to be 9.4nm. •Ordered 6,13-bis (triisopropylsilylethynyl) (TIPS)-Pentacene films are formed on substrates.•TIPS-Pentacene films can work with n-type Si as Schottky-type rectifying devices.•TIPS-Pentacene/SiO2 show obvious effects of accumulation and depletion with bias.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2015.01.054