Scanning electron microscopy of the surfaces of ion implanted SiC

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2015-07, Vol.354, p.23-27
• Main Authors: Malherbe, Johan B., van der Berg, N.G., Kuhudzai, R.J., Hlatshwayo, T.T., Thabethe, T.T., Odutemowo, O.S., Theron, C.C., Friedland, E., Botha, A.J., Wendler, E.
• Format: Article
• Language: English
• Subjects: Amorphization; Annealing; Bombardment; Critical temperature; Crystallites; Electron back scatter diffraction; Ion bombardment; Microstructure; Nuclear materials; Scanning electron microscopy; SEM; SiC; Silicon carbide
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2015.01.045

This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350°C), or above (i.e. 600°C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900°C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface.