Manipulation of Electric Field Effect by Orbital Switch

The semiconductor industry has seen a remarkable miniaturization trend, where the size of microelectronic circuit components is expected to reach the scale of atom even subatom. Here, an orbital switch formed at the interface between BaTiO3 (BTO) and La0.5Sr0.5MnO3 (LSMO) is used to manipulate the e...

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Bibliographic Details
Published in:Advanced functional materials 2016-02, Vol.26 (5), p.753-759
Main Authors: Cui, Bin, Song, Cheng, Mao, Haijun, Yan, Yinuo, Li, Fan, Gao, Shuang, Peng, Jingjing, Zeng, Fei, Pan, Feng
Format: Article
Language:English
Subjects:
electric field effect
Electric fields
Ferroelectric materials
Ferroelectricity
Heterostructures
interfaces
orbital switches
Orbitals
Semiconductors
Switches
Titanium
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Summary:The semiconductor industry has seen a remarkable miniaturization trend, where the size of microelectronic circuit components is expected to reach the scale of atom even subatom. Here, an orbital switch formed at the interface between BaTiO3 (BTO) and La0.5Sr0.5MnO3 (LSMO) is used to manipulate the electric field effect in the LSMO/BTO heterostructure. The orbital switch is based on the connection or breakdown of interfacial Ti–O–Mn bond due to the ferroelectric displacement under external electric field. This finding would pave the way for the tuning of the material performance or device operation at atomic level and introducing the orbital degree of freedom into the terrain of microelectronics. An orbital switch is constructed at the interface of BaTiO3/La0.5Sr0.5MnO3, a model ferroelectric/ferromagnetic heterostructure, by Ti ferroelectric displacement and the resultant modification of the orbital overlap of Ti–O–Mn covalent bond. The on–off state of orbital switch is directly proved and used to manipulate the electric field effect applied by ionic liquid on La0.5Sr0.5MnO3.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201504036