Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer

• Published in: ACS applied materials & interfaces 2016-07, Vol.8 (28), p.18249-18255
• Main Authors: Dao, Toan Thanh, Sakai, Heisuke, Nguyen, Hai Thanh, Ohkubo, Kei, Fukuzumi, Shunichi, Murata, Hideyuki
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.6b03183

We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4′-(N,N-diphenylamino)­phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly­(methyl methacrylate) (PMMA) and an electron-trapping layer of poly­(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of −2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 105 s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.