Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

• Published in: Nano letters 2016-03, Vol.16 (3), p.1614-1619
• Main Authors: Gonzalez-Zalba, M. Fernando, Shevchenko, Sergey N, Barraud, Sylvain, Johansson, J. Robert, Ferguson, Andrew J, Nori, Franco, Betz, Andreas C
• Format: Article
• Language: English
• Subjects: Capacitance; Charge; CMOS; Coherence; Interference; Qubits (quantum computing); Semiconductor devices; Silicon
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.5b04356

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunneling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio frequency resonant circuit coupled via the gate. Differential capacitance changes at the interdot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau–Zener–Stückelberg–Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunneling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, T 2 ≈ 100 ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.