Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure (Phys. Status Solidi A 9∕2015)

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2015-09, Vol.212 (9), p.np-n/a
• Main Authors: Fekecs, André, Korinek, Andreas, Chicoine, Martin, Ilahi, Bouraoui, Schiettekatte, François, Morris, Denis, Arès, Richard
• Format: Article
• Language: English
• Subjects: Diffraction; Evolution; Heterostructures; Indium phosphides; Microstructure; Nanostructure; Semiconductors; X-rays
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201570458

Devising ultrafast light‐absorbing materials that are photoconductive yet resistive, have high field breakdown limits, and which can operate near 1550 nm is challenging. Their emergent needs are foreseen for photoconductive terahertz antennas, picosecond detectors, and optoelectronic switches with regard to innovative applications in data transmission, spectroscopy, sensing, and imaging. Research on nanostructured semiconductors is highly promising for addressing this challenge. Several methods have been proposed to fabricate them in the InGaAs/InP semiconductor alloy system. An effective one is based on the recrystallization of a thick InGaAs(P)/InP heterostructure made amorphous by high energy Fe ion implantation. To gain insights into the optoelectronic performances of this novel photoconductive material, A. Fekecs, A. Korinek and coworkers (pp. 1888–1896) are reporting the results of a comprehensive microstructural investigation based on X‐ray diffraction and electron microscopy. The cover image depicts a polycrystalline active layer made of many elongated, internally faulted and textured submicron grains. The evolution of the X‐ray diffraction line broadening with rapid thermal annealing temperature allows new connections to be made between the material's subpicosecond photocarrier dynamics and its nanoscale substructure.